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RAM
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Chip
SAMSUNG
DDR SDRAM DIMM/SODIMM
M
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7
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12
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13
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15
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16
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17
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18
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1.
Memory Module(M) |
2.
Module Configuration |
3
: 4/8 Byte DIMM
4 : 4/8 Byte SODIMM |
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3.
4. Data Bit |
12 : x72 184pin 1U
Register DIMM
19 : x64 192pin U-DIMM
22 : x72 224pin Register DIMM
28 : x72 208pin Register DIMM
32 : x32 160pin U-DIMM
46 : x72 294pin Register DIMM with PLL
47 : x72 294pin Register DIMM with PLL(512MB DIR2)
63 : x64 172pin U-DIMM
64 : x64 160pin U-DIMM
66 : x64 168pin U-DIMM
68 : x64 184pin U-DIMM
70 : x64 200pin U-DIMM
72 : x64 184pin Register DIMM
73 : x64 184pin Register DIMM with FET switch
74 : x72 168pin U-DIMM
78 : x64 240pin U-DIMM
81 : x72 184pin U-DIMM
83 : x72 184pin Register DIMM
85 : x72 200pin U-DIMM
88 : x72 200pin Register DIMM
89 : x64 200pin Register DIMM
91 : x72 240pin U-DIMM
93 : x72 240pin Register DIMM |
5. Feature,Voltage |
C
: Network-DRAM,(2.5V VDD)
H : DDR SDRAM (3.3V VDD)
T : DDR-¥±
L : DDR SDRAM (2.5V VDD) |
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6.
7. Depth |
01
: 1M |
02
: 2M |
04
: 4M |
08
: 8M |
09
: 8M(for 128Mb/512Mb) |
16
: 16M |
17
: 16M(for 128Mb/512Mb) |
28
: 128M |
29
: 128M(for 128Mb/512Mb) |
32
: 32M |
33
: 32M(for 128Mb/512Mb) |
56
: 256M |
64
: 64M |
65
: 64M(for 128Mb/512Mb) |
8.
# of bank in Comp.,Interface,Refresh |
0 : 4bank,Mixed
interface,64m/4K Refresh(15.6us)
1 : 4bank,SSTL_2,64m/4K Refresh(15.6us)
2 : 4bank,SSTL_2,64m/8K Refresh(7.8us)
3 : 8bank,SSTL_2,128m/16K Refresh(7.8us)
5 : 4bank,SSTL(1.8V,1.8V),64ms/8K(7.8us) |
9.
Composition Component |
0
: x4
3 : x8
4 : x16
5 : x32
6 : x16+x32
7 : x4 Stack(Uniframe)
8 : x4 Stack(Flexframe)
9 : x8 Stack(Flexframe) |
10.
Component Generation |
M
: 1st Generation
A : 2nd Generation
B : 3rd Generation
C : 4th Generation
D : 5th Generation
E : 6th Generation |
11. Package |
G
: UBGA |
K
: TSOP2-400 for DDP |
N
: STSOP2 |
T
: TSOP2-400 |
U
: TSOP2-400F-LF |
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12.
PCB Revision & Type |
0
: None |
1
: 1st Rev. |
2
: 2nd Rev. |
3
: 3rd Rev. |
L
: Low Cost |
M
: New PC2700 |
S
: PCB 6 Layer |
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13.
" - " |
14.
Power |
C
: Normal Power, Self Ref.
L : Low Power, Self Ref. |
15.
16. Speed |
A0
: 10 ns @CL2 |
A2
: 7.5 ns @CL2 |
A3
: 6 ns @CL2 |
A4
: 5 ns @CL2 |
AA
: 7.5 ns @CL2,TRCD2,TRP2 |
B0
: 7.5ns @CL2.5 |
B3
: 6 ns @CL2.5 |
B4
: 5 ns @CL2.5 |
C4
: 5 ns @CL3 |
C5
: 3.75 ns @CL3 |
CC
: 5ns@CL3,TRCD3,TRP3 |
D3
: 6 ns @CL4 |
D4
: 5 ns @CL4 |
D5
: 3.75 ns @CL4 |
D6
: 3.0 ns @CL4 |
E4
: 5 ns @CL5 |
E5
: 3.75 ns @CL5 |
E6
: 3.0 ns @CL5 |
F6
: 3.0 ns @CL6 |
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17.
18. Customer (Special Handling) "Customer
List Reference" |
SAMSUNG
SDRAM DIMM/SODIMM
M
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X
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X
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X
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X
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X
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X
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X
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X
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X
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X
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-
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1
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2
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3
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4
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5
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6
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7
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8
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9
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10
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11
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12
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13
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14
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15
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16
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17
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18
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1.
Memory Module(M) |
2.
Module Configuration |
3
: 4/8 Byte DIMM(100, 168, 200, 232, 278pin) |
4
: 8 Byte SODIMM(144pin) |
8
: 4 Byte AIMM(132pin) |
3. 4. Data bits |
20
: x72/ECC PLL+Register DIMM with PPD
23 : x144/ECC PLL+Register DIMM
32 : x32 AIMM w/o SPD
45 : x144/ECC PLL+Register DIMM for 200pin(SGI)
50 : x72/ECC w/o PLL+Register DIMM with SPD for
168pin(Intel)
63 : x64 micro DIMM with SPD
64 : x64 PC100 SODIMM with SPD
65 : x64 168pin w/o SPD(Old JEDEC)
66 : x64 U-DIMM/SODIMM with SPD
74 : x72/ECC U-DIMM with SPD
75 : x72/ECC PLL+Register DIMM with SPD for 168pin(JEDEC)
77 : x72/ECC PLL+Register DIMM with SPD for 168pin(Intel)
78 : x72/ECC PLL+Register DIMM with SPD for 200pin(JEDEC)
79 : x72/ECC PLL+Register DIMM with PPD for 200pin(SGI)
81 : x72/ECC U-DIMM for 200pin(IBM)
90 : x72/ECC PLL+Register DIMM with SPD for 168pin(RCC)
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5.
Feature,Voltage |
S
: SDRAM.3.3V |
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6.
7. Depth |
01
: 1M |
02
: 2M |
04
: 4M |
08
: 8M |
09
: 8M(for 128Mb/512Mb) |
12
: 96M |
16
: 16M |
17
: 16M(for 128Mb/512Mb) |
28
: 128M |
29
: 128M(for 128Mb/512Mb) |
32
: 32M |
33
: 32M(for 128Mb/512Mb) |
56
: 256M |
64
: 64M |
65
: 64M(for 128Mb/512Mb) |
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8.
Refresh,# of banks,Interface |
0
: 4K/64ms Ref., 2Bank, LVTTL |
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1
: 2K/32ms Ref., 2Bank, LVTTL |
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2
: 4K/64ms Ref., 4Bank, LVTTL |
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3
: 4K/64ms Ref., 2Bank, SSTL |
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5
: 8K/64ms Ref., 4Bank, LVTTL |
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9.
Composition Component |
0
: x4
3 : x8
4 : x16
5 : x32
6 : x16+x32
7 : x4 Stack(Uniframe)
8 : x4 Stack(Flexframe)
9 : x8 Stack(Flexframe) |
10.
Generation |
M
: 1st Generation
A : 2nd Generation
B : 3rd Generation
C : 4th Generation
D : 5th Generation
E : 6th Generation
F : 7th Generation |
11. Package |
G
: CSP(¡æUBGA, WBGA) |
L
: LSSOP |
N
: STSOP2-400 |
K
: TSOP2-400 for DDP |
O
: TSOP2-400-LF |
T
: TSOP2-400 |
U
: TSOP2-400F-LF |
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12.
Package |
0
: None |
1
: 1st Rev. |
2
: 2nd Rev. |
3
: 3rd Rev. |
C
: CPQ 200pin 133MHz |
F
: PC66 4Layer |
H
: HP |
M
: IBM |
N
: NOKIA |
P
: for Apple 1.15inch U-DIMM |
R
: for SUN 2.5inch NGDIMM |
Q
: COMPAQ |
S
: PC100 4Layer |
U
: Intel 1U DIMM |
Y
: SONY |
L
: PC66 |
13.
" - " |
14.
Power |
C
: Normal Power, Self Ref.
L : Low Power, Self Ref. |
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15.
16. Speed(tCC : Default CL3) |
10
: 10ns PC66 |
12
: 12ns |
15
: 15ns |
1H
: 10ns @CL2 PC100 |
1L
: 10ns PC100 |
50
: 5ns |
60
: 6ns |
70
: 7ns |
75
: 7.5ns PC133 |
7A
: PC133 3-3-3 + PC100 2-2-2 |
7B
: PC133 3-2-2 + PC100 2-2-2 |
7C
: 7.5ns PC133 2-2-2 80 : 8ns |
80
: 8ns |
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17.
18. Customer(Special Handling) "Customer
List Reference" |
samsung EDO/FastPage DIMM/SODIMM
M
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